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| PD-96027 IRF7702PBF HEXFET(R) Power MOSFET l l l l l l l Ultra Low On-Resistance -1.8V Rated P-Channel MOSFET Very Small SOIC Package Low Profile ( < 1.1mm) Available in Tape & Reel Lead-Free VDSS -12V RDS(on) max 0.014@VGS = -4.5V 0.019@VGS = -2.5V 0.027@VGS = -1.8V ID -8.0A -7.0A -5.8A 9 ' & % $ 'A2A9 &A2AT %A2AT $A2A9 Description HEXFET(R) Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides thedesigner ! " # A2A9 !A2AT "A2AT #A2AB B T with an extremely efficient and reliable device for battery and load management. The TSSOP-8 package has 45% less footprint area than the standard SO-8. This makes the TSSOP-8 an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.1mm) allows it to fit easily into extremely thin environments such as portable electronics and PCMCIA cards. TSSOP-8 Absolute Maximum Ratings Parameter VDS ID @ TC = 25C ID @ TC = 70C IDM PD @TC = 25C PD @TC = 70C VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Max. -12 8.0 7.0 70 1.5 0.96 0.01 8.0 -55 to + 150 Units V A W W/C V C Thermal Resistance Parameter RJA Maximum Junction-to-Ambient Max. 83 Units C/W www.irf.com 1 02/06/06 IRF7702PBF Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Min. Typ. Max. Units Conditions -12 --- --- V VGS = 0V, ID = -250A --- -0.007 --- V/C Reference to 25C, I D = -1mA --- --- 0.014 VGS = -4.5V, ID = -8.0A --- 0.019 VGS = -2.5V, ID = -7.0A --- 0.027 VGS = -1.8V, ID = -5.8A -0.45 --- -1.2 V VDS = VGS, ID = -250A 26 --- --- S VDS = -10V, ID = -8.0A --- --- 1.0 VDS = -12V, VGS = 0V A --- --- -25 VDS = -9.6V, VGS = 0V, TJ = 70C --- --- -100 VGS = -8.0V nA --- --- 100 VGS = 8.0V --- 54 81 ID = -8.0A --- 7.8 12 nC VDS = -9.6V --- 15 23 VGS = -4.5V --- 16 --- VDD = -6.0V ns --- 21 --- ID = -1.0A --- 320 --- RD = 6.0 --- 250 --- RG = 6.0 --- 3470 --- VGS = 0V --- 1040 --- pF VDS = -10V --- 670 --- = 1.0MHz Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Min. Typ. Max. Units --- --- --- --- 58 41 -1.5 A -70 -1.2 87 62 V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = -1.5A, VGS = 0V TJ = 25C, IF = -1.5A di/dt = 100A/s D S Notes: Repetitive rating; pulse width limited by max. junction temperature. When mounted on 1 inch square copper board, t<10 sec Pulse width 300s; duty cycle 2%. 2 www.irf.com IRF7702PBF 1000 VGS -7.50V -5.00V -4.00V -3.50V -3.00V -2.50V -2.00V BOTTOM -1.50V TOP 1000 -I D , Drain-to-Source Current (A) -I D , Drain-to-Source Current (A) VGS -7.50V -5.00V -4.00V -3.50V -3.00V -2.50V -2.00V BOTTOM -1.50V TOP 100 100 -1.50V 10 10 -1.50V 1 0.1 20s PULSE WIDTH TJ = 25 C 1 10 100 1 0.1 20s PULSE WIDTH TJ = 150 C 1 10 100 -VDS , Drain-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 100.00 T J = 25C -I SD, Reverse Drain Current (A) -I D , Drain-to-Source Current (A) T J = 150C 100 10.00 TJ = 150 C TJ = 25 C V DS = -15V 20s PULSE WIDTH 2.0 2.5 3.0 3.5 VGS = 0V 1.00 0.0 1.0 2.0 3.0 4.0 5.0 6.0 -V SD, Source-toDrain Voltage (V) 10 1.5 -VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics Fig 4. Typical Source-Drain Diode Forward Voltage www.irf.com 3 IRF7702PBF 5000 4000 -VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 10 ID = -8.0A VDS =-9.6V 8 C, Capacitance (pF) Ciss 3000 6 2000 4 1000 Coss Crss 1 10 100 2 0 0 0 20 40 60 80 -VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 0.80 1000 OPERATION IN THIS AREA LIMITED BY RDS(on) -V GS(th) , Variace ( V ) 0.60 -ID , Drain Current (A) I ID = -250A 100 100us 0.40 10 1ms 0.20 -75 -50 -25 0 25 50 75 100 125 150 1 0.1 TA = 25 C TJ = 150 C Single Pulse 1 10 10ms 100 T J , Temperature ( C ) -VDS , Drain-to-Source Voltage (V) Fig 7. Threshold Voltage Vs. Temperature Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF7702PBF 8.0 40 -ID , Drain Current (A) 6.0 30 4.0 Power (W) 25 50 75 100 125 150 20 2.0 10 0.0 0 0.01 0.10 1.00 10.00 100.00 TC , Case Temperature ( C) Time (sec) Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10. Typical Power Vs. Time 100 D = 0.50 Thermal Response (Z thJA ) 0.20 10 0.10 0.05 0.02 1 0.01 PDM t1 t2 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJA + TA 0.01 0.1 1 10 100 0.1 0.00001 0.0001 0.001 t1 , Rectangular Pulse Duration (sec) Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRF7702PBF RDS(on) , Drain-to-Source On Resistance (Normalized) ID = -8.0A RDS (on) , Drain-to-Source On Resistance () 2.0 0.20 0.16 1.5 0.12 1.0 0.08 VGS = -2.5V VGS = -4.5V 0.5 0.04 0.0 -60 -40 -20 VGS = -4.5V 0 20 40 60 80 100 120 140 160 0.00 0 20 40 60 80 100 -I D , Drain Current (A) TJ , Junction Temperature ( C) Fig 12. Normalized On-Resistance Vs. Temperature Fig 13. Typical On-Resistance Vs. Drain Current RDS(on) , Drain-to -Source On Resistance () 0.020 ID = -8.0A 0.015 0.010 1.5 2.5 3.5 -V GS, Gate -to -Source Voltage (V) Fig 14. Typical On-Resistance Vs. Gate Voltage 6 www.irf.com IRF7702PBF TSSOP8 Package Outline Dimensions are shown in millimeters (inches) % !Y @! 9 $ 7PUCATD9@T % @ @ qqq 867 DI9@Y H6SF "Y r 7 $ T H 7 P G 6 6 6! i p 9 @ @ r G G hhh iii ppp qqq HP $"66A9DH@ITDPIT DI8C@T HDGGDH@U@ST HDI IPH H6Y HDI IPH ! $ $ ! ' $ "! "( ( " &$ ( ! "% !( " " $ ' %#A7T8 !$ A7T8 #" ## #$ & &" !$% %$A7T8 #$ % &$ &' !"% !$A7T8 A7T8 ' $ ! "( "( ( &' H6Y #&! $( # ' &' !! && !( ' r! 6 8 'YAi iii hhh 8 6 ppp 6! # C 'YAp G 867 'ATVSA & 'YAG G@69A6TTDBIH@IUT 9 T T B ' & % $ 9 T T 9 9 T T B ' & % $ 9! T! T! B! IPU@T AA9DH@ITDPIDIBA6I9AUPG@S6I8DIBAQ@SA6TH@A #$H ((# !AA9DH@ITDPITA6S@ATCPXIADIAHDGGDH@U@STA6I9ADI8C@T "AA8PIUSPGGDIBA9DH@ITDPI)AHDGGDH@U@S #AAA96UVHAQG6I@ACADTAGP86U@9A6TATCPXI $AAA96UVHA6A6I9A7AUPA7@A9@U@SHDI@9A6UA96UVHAQG6I@AC %AAA9DH@ITDPITA9A6I9A@ A6S@AH@6TVS@9A6UA96UVHAQG6I@AC &AAA9DH@ITDPIAGADTAUC@AG@69AG@IBUCAAPSATPG9@SDIBAUPA6ATV7TUS6U@ 'AAPVUGDI@A8PIAPSHTAUPAE@9@8APVUGDI@AH $"66 ! " # TDIBG@ 9D@ ! " # 9V6G 9D@ www.irf.com 7 IRF7702PBF TSSOP8 Part Marking Information @Y6HQG@) UCDTADTA6IADSA&&! 96U@A8P9@AXX ;;;;; <::"3 Q6SUAIVH7@S GPUA8P9@ QAvhyA2AAGrhqArrA 6TT@H7GATDU@A8P9@ TSSOP-8 Tape and Reel Information %A A "A % 'A A@@9A9DS@8UDPI IPU@T) AAU6Q@AEAS@@GAPVUGDI@A8PIAPSHTAUPA@D6#' AEA@D6$# Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 02/06 8 www.irf.com |
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